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1. product pro?le 1.1 general description 120 w ldmos power transistor for base station applications at frequencies from 800 mhz to 1000 mhz. [1] acpr 400 at 30 khz resolution bandwidth [2] acpr 600 at 30 khz resolution bandwidth 1.2 features n typical gsm edge performance at a frequency of 920 mhz and 960 mhz, a supply voltage of 28 v and an i dq of 650 ma u load power = 48 w (av) u gain = 19 db (typ) u ef?ciency = 40 % (typ) u acpr 400 = - 61 dbc (typ) u acpr 600 = - 72 dbc (typ) u evm rms = 1.5 % (typ) n easy power control n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (800 mhz to 1000 mhz) n internally matched for ease of use BLF4G10LS-120 uhf power ldmos transistor rev. 01 10 january 2006 product data sheet table 1: typical performance f = 920 mhz to 960 mhz; t h =25 c; in a class-ab production test circuit; typical values. mode of operation v ds (v) p l (w) g p (db) h d (%) acpr 400 (dbc) acpr 600 (dbc) evm (%) imd3 (dbc) cw 28 120 19 57 - - - - gsm edge 28 48 (av) 19 40 - 61 [1] - 72 [2] 1.5 - 2-tone 28 120 (pep) 19 46 - - - - 31 caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 2 of 13 philips semiconductors BLF4G10LS-120 uhf power ldmos transistor 1.3 applications n rf power ampli?ers for gsm, gsm edge and cdma base stations and multicarrier applications in the 868 mhz to 961 mhz frequency range. 2. pinning information [1] connected to ?ange 3. ordering information 4. limiting values 5. thermal characteristics table 2: pinning pin description simpli?ed outline symbol 1 drain 2 gate 3 source [1] 3 2 1 1 3 2 sym039 table 3: ordering information type number package name description version BLF4G10LS-120 - earless ?anged ldmost ceramic package; 2 leads sot502b table 4: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage - 0.5 +15 v i d drain current - 12 a t stg storage temperature - 65 +150 c t j junction temperature - 200 c table 5: thermal characteristics symbol parameter conditions min typ max unit r th(j-case) thermal resistance from junction to case t case =80 c p l = 60 w - 0.62 0.71 k/w p l = 120 w - 0.52 0.61 k/w
9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 3 of 13 philips semiconductors BLF4G10LS-120 uhf power ldmos transistor 6. characteristics 7. application information 7.1 ruggedness in class-ab operation the BLF4G10LS-120 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 650 ma; p l = 120 w (cw); f = 960 mhz. table 6: characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.9 ma 65 - - v v gs(th) gate-source threshold voltage v ds =10v; i d = 180 ma 2.5 3.1 3.5 v v gsq gate-source quiescent voltage v ds =28v; i d = 900 ma 2.70 3.20 3.70 v i dss drain leakage current v gs =0v; v ds =28v - - 2.5 m a i dsx drain cut-off current v gs =v gs(th) +9v; v ds =10v 27 30 - a i gss gate leakage current v gs =15v; v ds = 0 v - - 300 na g fs forward transconductance v ds =10v; i d = 10 a - 9.0 - s r ds(on) drain-source on-state resistance v gs =v gs(th) +6v; i d =6a -90-m w c rs feedback capacitance v gs =0v; v ds =28v; f = 1 mhz - 2.5 - pf table 7: application information mode of operation: gsm edge; f = 920 mhz and 960 mhz; rf performance at v ds = 28 v; i dq = 650 ma; t case =25 c; unless otherwise speci?ed, in a class ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 48 w 17.5 19 - db irl input return loss p l(av) = 48 w - - 8.0 - 5.5 db h d drain ef?ciency p l(av) = 48 w 35.8 40 - % acpr 400 adjacent channel power ratio (400 khz) p l(av) = 48 w - - 61 - 58 dbc acpr 600 adjacent channel power ratio (600 khz) p l(av) = 48 w - - 72 - 68 dbc evm rms rms edge signal distortion error p l(av) = 48 w - 1.5 2.5 % evm m peak edge signal distortion error p l(av) = 48 w - 5 8.5 %
9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 4 of 13 philips semiconductors BLF4G10LS-120 uhf power ldmos transistor v ds = 28 v; i dq = 650 ma; t case =25 c; f = 960 mhz v ds =28v; i dq = 650 ma; t case =25 c; f = 960 mhz fig 1. one-tone cw power gain and drain ef?ciency as functions of load power; typical values fig 2. two-tone cw power gain and drain ef?ciency as functions of average load power; typical values v ds = 28 v; i dq = 650 ma; t case =25 c; f = 960 mhz v ds =28v; t case =25 c; f = 960 mhz (1) i dq = 550 ma (2) i dq = 650 ma (3) i dq = 750 ma (4) i dq = 850 ma fig 3. intermodulation distortion as a function of average load power; typical values fig 4. third order intermodulation distortion as a function of average load power; typical values p l (w) 0 180 140 80 100 40 20 60 120 160 001aac410 14 16 12 18 20 g p (db) 10 20 30 10 40 50 60 70 h d (%) 0 g p h d p l(av) (w) 090 70 40 50 20 10 30 60 80 001aac411 14 16 12 18 20 g p (db) 10 20 30 10 40 50 60 h d (%) 0 g p h d p l(av) (w) 080 60 20 40 001aac412 - 40 - 60 - 20 0 imd (dbc) - 80 imd3 imd5 imd7 p l(av) (w) 080 60 20 40 001aac413 - 40 - 60 - 20 0 imd3 (dbc) - 80 (3) (4) (2) (1)
9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 5 of 13 philips semiconductors BLF4G10LS-120 uhf power ldmos transistor v ds =28v; i dq = 650 ma; t case =25 c; f = 960 mhz v ds =28v; i dq = 650 ma; t case =25 c; f = 960 mhz fig 5. gsm edge power gain and drain ef?ciency as functions of average load power; typical values fig 6. gsm edge acpr at 400 khz and at 600 khz as a function of average load power; typical values v ds = 28 v; i dq = 650 ma; t case =25 c; f = 960 mhz v ds =28v; i dq = 650 ma; t case =25 c; f = 960 mhz fig 7. gsm edge rms evm and peak evm as functions of average load power; typical values fig 8. gsm edge acpr at 400 khz and rms evm as functions of drain ef?ciency; typical values p l(av) (w) 080 60 20 40 001aac414 17 18 16 19 20 15 g p h d 20 10 40 50 30 h d (%) 0 g p (db) p l(av) (w) 080 60 20 40 001aac415 - 70 - 80 - 60 - 50 acpr (dbc) - 90 acpr 400 acpr 600 p l(av) (w) 080 60 20 40 001aac416 4 6 2 8 10 evm (%) 0 evm m evm rms h d (%) 050 40 20 30 10 001aac417 - 64 - 68 - 60 - 56 acpr (dbc) - 72 acpr 400 evm rms 2 1 3 4 3 2 1 evm (%) 0
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x 9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 6 of 13 philips semiconductors BLF4G10LS-120 uhf power ldmos transistor 8. test information see t ab le 8 for list of components. fig 9. class-ab test circuit at f = 960 mhz c9 c5 r1 c1 c4 c2 c3 c10 c8 c7 c6 v ds v gs rf in rf out 001aad830
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx 9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 7 of 13 philips semiconductors BLF4G10LS-120 uhf power ldmos transistor striplines are on a double copper-clad rogers 6006 printed-circuit board (pcb) ( e r = 6.2); thickness = 0.025 inches. see t ab le 8 for list of components. fig 10. component layout for 960 mhz test circuit c1 c2 c5 c6 c7 c8 c10 c3 c4 r1 c9 v gs 001aad831 philips blf4g10-120 rev.1 in philips blf4g10-120 rev.1 out v ds
9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 8 of 13 philips semiconductors BLF4G10LS-120 uhf power ldmos transistor [1] american technical ceramics type 100b or capacitor of same quality. table 8: list of components (see figure 9 and figure 10 ) component description value dimensions catalogue number c1, c4, c5, c6 multilayer ceramic chip capacitor [1] 68 pf c2 multilayer ceramic chip capacitor [1] 5.1 pf c3 multilayer ceramic chip capacitor [1] 3.0 pf c7 multilayer ceramic chip capacitor 1 m f 1812x7r105kl2ab c8, c9 tantalum capacitor 10 m f; 35 v c10 philips electrolytic capacitor 220 m f r1 philips chip resistor 5.1 w 0603
9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 9 of 13 philips semiconductors BLF4G10LS-120 uhf power ldmos transistor 9. package outline fig 11. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 99-12-28 03-01-10 0 5 10 mm scale earless flanged ldmost ceramic package; 2 leads sot502b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 10 of 13 philips semiconductors BLF4G10LS-120 uhf power ldmos transistor 10. abbreviations table 9: abbreviations acronym description cdma code division multiple access cw continuous wave edge enhanced data rates for gsm evolution esr equivalent series resistance evm error vector magnitude gsm global system for mobile communications i dq quiescent drain current ldmos laterally diffused metal oxide semiconductor pep peak envelope power rf radio frequency smd surface mount device vswr voltage standing wave ratio
philips semiconductors BLF4G10LS-120 uhf power ldmos transistor 9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 11 of 13 11. revision history table 10: revision history document id release date data sheet status change notice doc. number supersedes BLF4G10LS-120_1 20060110 product data sheet - 9397 750 14547 -
philips semiconductors BLF4G10LS-120 uhf power ldmos transistor 9397 750 14547 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 10 january 2006 12 of 13 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 15. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 16. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2006 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 10 january 2006 document number: 9397 750 14547 published in the netherlands philips semiconductors BLF4G10LS-120 uhf power ldmos transistor 17. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation. . . . . . . . . . 3 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 13 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 16 contact information . . . . . . . . . . . . . . . . . . . . 12

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